Graphene transistors are considered to be the successor’s basic element for the next generation of
advanced integrated circuits. The graphene suffers from the absence of energy band gap to experience a
semiconductor like characteristics. In order to instigate a bandgap, several techniques are used to beak
symmetry. The most useful graphene sheet is the Graphene Nanoribbon (GNR). The present paper deals
with the investigation on the bandgap engineering approach aiming an increase of the switching
characteristics of the graphene transistors. The GNR sheets are synthesized using different techniques
yielding controlled electronics and physical characteristics